MRF9045LR1 mrf9045lsr1 5 ? 1 rf device data freescale semiconductor rf power field effect transistors n ? channel enhancement ? mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1000 mhz. the high ga in and broadband performance of these devices make them ideal for large ? signal, common ? source amplifier applica- tions in 28 volt base station equipment. ? typical two ? tone performance at 945 mhz, 28 volts output power ? 45 watts pep power gain ? 18.8 db efficiency ? 42% imd ? ? 32 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 945 mhz, 45 watts cw output power ? excellent thermal stability ? characterized with series equivalent large ? signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? low gold plating thickness on leads. l suffix indicates 40 ? nominal. table 1. maximum ratings rating symbol value unit drain ? source voltage v dss ? 0.5, +65 vdc gate ? source voltage v gs ? 0.5, + 15 vdc total device dissipation @ t c = 25 c MRF9045LR1 derate above 25 c mrf9045lsr1 p d 125 0.71 175 1 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case MRF9045LR1 mrf9045lsr1 r jc 1.4 1.0 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mrf9045 rev. 9, 12/2004 freescale semiconductor technical data MRF9045LR1 mrf9045lsr1 945 mhz, 45 w, 28 v lateral n ? channel broadband rf power mosfets case 360b ? 05, style 1 ni ? 360 MRF9045LR1 case 360c ? 05, style 1 ni ? 360s mrf9045lsr1 ? freescale semiconductor, inc., 2004. all rights reserved.
5 ? 2 rf device data freescale semiconductor MRF9045LR1 mrf9045lsr1 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 350 madc) v gs(q) ? 3.7 ? vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 4 ? s dynamic characteristics input capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 69 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 37 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf (continued)
MRF9045LR1 mrf9045lsr1 5 ? 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) two ? tone common ? source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18.8 ? db two ? tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 38 42 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ? 32 ? 28 dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ? 14 ? 9 db two ? tone common ? source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 18.5 ? db two ? tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 41 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ? 33 ? dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? 13 ? db power output, 1 db compression point (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) p 1db ? 55 ? w common ? source amplifier power gain (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) g ps ? 18 ? db drain efficiency (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) ? 60 ? % output mismatch stress (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f = 945.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power
5 ? 4 rf device data freescale semiconductor MRF9045LR1 mrf9045lsr1 figure 1. 930 ? 960 mhz broadband test circuit schematic z4 0.360 x 0.320 microstrip z5 0.240 x 0.320 x 0.620 , taper z6 0.140 x 0.620 microstrip z7 0.510 x 0.620 microstrip z8 0.330 x 0.320 microstrip z9 0.140 x 0.320 microstrip z10 0.070 x 0.080 microstrip z11 0.240 x 0.080 microstrip z12 0.140 x 0.080 microstrip z13 0.930 x 0.080 microstrip z14 0.180 x 0.080 microstrip z15 0.350 x 0.080 microstrip pcb arlon gx ? 0300 ? 55 ? 22, 0.03 , r = 2.55 b1 short ferrite bead surface mount b2 long ferrite bead surface mount c1, c7, c13, c14 47 pf chip capacitors c2, c3, c11 0.8 ? 8.0 pf gigatrim variable trim capacitors c4, c5, c8, c9 10 pf chip capacitors c6, c15, c16 10 f, 35 v tantalum surface mount chip capacitors c10 2.2 pf chip capacitor c12 0.7 pf chip capacitor ? mrf9045ls 1.3 pf chip capacitor ? mrf9045 c17 220 f, 50 v electrolytic capacitor l1, l2 12.5 nh surface mount inductors, coilcraft z1 0.260 x 0.080 microstrip z2 0.610 x 0.120 microstrip z3 0.260 x 0.320 microstrip figure 2. 930 ? 960 mhz broadband test circuit component layout cut out area 900 mhz mrf9045 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF9045LR1 mrf9045lsr1 5 ? 5 rf device data freescale semiconductor typical characteristics figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain, efficiency versus output power
5 ? 6 rf device data freescale semiconductor MRF9045LR1 mrf9045lsr1 figure 8. series equivalent source and load impedance f mhz z source ? z load ? 930 945 960 1.02 + j0.06 1.15 + j0.25 1.10 + j0.11 2.6 + j0.20 2.6 + j0.16 2.6 + j0.10 ? z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.
MRF9045LR1 mrf9045lsr1 5 ? 7 rf device data freescale semiconductor package dimensions case 360b ? 05 issue f ni ? 360 MRF9045LR1 g e c
q 2x !!! d 2x k 2x b b (flange) h f a m (insulator) a t n (lid) r (lid) s (insulator) case 360c ? 05 issue d ni ? 360s mrf9045lsr1
e c
!!! h f r (lid) s (insulator) d 2x b b (flange) m (insulator) t n (lid) a (flange) a k 2x pin 3
5 ? 8 rf device data freescale semiconductor MRF9045LR1 mrf9045lsr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004. all rights reserved. how to reach us: home page: www.freescale.com e ? mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 ? 800 ? 521 ? 6274 or +1 ? 480 ? 768 ? 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 ? 8 ? 1, shimo ? meguro, meguro ? ku, tokyo 153 ? 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 ? 800 ? 441 ? 2447 or 303 ? 675 ? 2140 fax: 303 ? 675 ? 2150 ldcforfreescalesemiconductor@hibbertgroup.com mrf9045 rev. 9, 12/2004 document number:
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